High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
نویسندگان
چکیده
منابع مشابه
High mobility flexible graphene field-effect transistors and ambipolar radio-frequency circuits.
Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene. High current density (nearly 200 μA μm(-1)) with saturation, almost perfect ambipolar electron-hole behavior, high transconductance (120 μS μm(-1)) and good stability over 381 days were obtained. The average carrier mobility for holes (electrons) is 13,540 cm(2) V...
متن کاملVariable Temperature Mobility Analysis of n-Channel, p-Channel, and Ambipolar Organic Field-Effect Transistors
DOI: 10.1002/adfm.200900831 The temperature dependence of field-effect transistor (FET)mobility is analyzed for a series of n-channel, p-channel, and ambipolar organic semiconductorbased FETs selected for varied semiconductor structural and device characteristics. The materials (and dominant carrier type) studied are 5,5000bis(perfluorophenacyl)-2,20:50,200:500,2000-quaterthiophene (1, n-channe...
متن کاملHigh-mobility ambipolar ZnO-graphene hybrid thin film transistors
In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar...
متن کاملUtilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency ope...
متن کاملAmbipolar Triple Cation Perovskite Field Effect Transistors and Inverters.
Ambipolar perovskite field-effect transistors and inverters with balanced mobilities are demonstrated. Thin-film field-effect-transistor-like inverters are developed, and a maximum gain of 23 in the first quadrant for VDD = 80 V is obtained.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2013
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4789365